应届毕业生
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职位描述
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Summary:
A discrete power device product engineer with certain work experience, responsible for the development of new discrete devices (such as SiC、GaN、SGT、SJ etc.), covering from target specification setting to large-scale production stage. The job responsibilities include testing plan design, product characterization verification and reliability assessment, improvement of product yield, resolution of various production related issues, and continuous quality improvement. 具备一定工作经验的分立功率器件产品工程师，负责分立器件（SiC、GaN、SGT、SJ等）新产品的开发工作，涵盖从目标规格设定到大规模量产阶段。工作内容包括测试计划设计、产品特性化验证和可靠性鉴定、产品良率的提升、生产相关的各类问题的解决以及持续的质量改进。
RESPONSIBILITIES:
1. Co-work with device design engineer, marketing engineer to finish device requirement analysis, competitor analysis, construction analysis, build up the product development target and plan. Product types include and not limited to SiC, GaN, SGT, SJ etc. 与器件设计工程师, 市场工程师共同完成器件设计需求分析、竞争对手分析、结构分析等，制定产品开发目标和计划。产品类型包括但不限于SiC、GaN、SGT、SJ等。
2. Collaborate with testing engineers to develop device testing plans and schemes, and complete testing verification.协同测试工程师制定器件测试计划和测试方案，完成测试验证。
3. Responsible for following up on the fab and packaging of new products throughout the process, and analyzing, identifying, and addressing various issues during the product preparation process. 负责全程跟进新产品的流片、封装，并分析、识别、处理产品制备过程中的各类问题。
4. Support product characterization, collaborate with design, application engineer to write the datasheet specifications. 完成产品特性验证，与设计、应用工程师合作编写数据表规范。
5. Complete product reliability testing and continuously promote product yield improvement.完成产品的可靠性测试并持续推进产品的良率改善。
6. Collaborate with internal team for engineering sample support and delivery. 协同内部团队，确保工程样品的按时交付；
7. Engage in solving all issues meet internal or external to improve the product quality across the product lifetime. 介入解决产品生命周期中面临的各种内部或外部问题，以提升产品质量；
8. Support on products subcon (fab/bumping/assembly/test etc.) transfer. 参与产品外包工厂(晶圆代工/凸点代工/封装/测试等)的迁移。
REQUIREMENTS:
1. Master's students majoring in microelectronics and related fields, with at least two years of work experience in domestic and international power device semiconductor companies preferred. 微电子及相关专业硕士研究生，有国内、国际功率器件半导体大厂工作两年以上经历者优先。
2. NPI experience of SiC, GaN, SGT MOS etc. products development is specially preferred. 有SiC、GaN、SGT MOS等产品开发NPI经验者尤佳。
3. Familiar with discrete power device product characterization and qualification (ESD/LU/HTRB/HTGB/H3TRB/IOL etc.). 熟悉分立功率器件的特性化验证和可靠性鉴定(ESD/LU/HTRB/HTGB/H3TRB/IOL etc.).
4. Strong experience in managing R
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工作地点
地址：成都郫都区郫都区成都高新综合保税区B区
求职提示：用人单位发布虚假招聘信息，或以任何名义向求职者收取财物（如体检费、置装费、押金、服装费、培训费、身份证、毕业证等），均涉嫌违法，请求职者务必提高警惕。
职位发布者
孙莉君/..HR
成都芯源系统有限公司
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电子技术·半导体·集成电路
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1000人以上
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公司性质未知
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高新区综合保税区科新路8号
