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工作职责:1. 3D NAND 存储器件仿真与建模分析。2. 通过仿真和数值、解析建模，分析3D NAND存储器件及阵列操作的性能及可靠性问题，实现3D NAND存储器器件级阵列级的性能及可靠性优化。3. 新一代3D NAND技术的存储器件建模与前期技术研发。4. 存储器相关新结构和新工艺的仿真流程搭建和仿真分析。5. 存储器相关操作方式的优化和仿真分析。6. 存储器相关仿真模型与仿真方法的研发。1. 3D NAND memory device simulation and modeling analysis.2. Analyze the characteristics and reliability problems of 3D NAND memory device by simulation, numerical and analytical modeling, to further realize the optimization of the characteristics and reliability of 3D NAND memory device at the array level.3. New generation 3D NAND technology memory device modeling and preliminary technology development.4. Memory device related new structure and new process simulation process setup and simulation analysis.5. Optimization and simulation analysis of memory device related operation scheme.6. Development of memory device related simulation model and simulation method任职资格:1. 学历：物理/微电子/材料等专业硕士及以上2. 工作年限：2年MOS或flash器件相关工作经验3. 熟悉半导体工艺和器件技术，有CMOS或存储器件仿真经验4. 熟练使用TCAD仿真软件5. 掌握扎实的半导体器件知识6. 有一定的python或C 语言基础7. 良好的沟通能力、英语口语和书面写作能力8. 良好的学习能力和分析问题的能力1. Master degree or above in physics/microelectronics/materials2. Working experience: 2 years related work experience in MOS or flash devices3. Familiar with semiconductor process and device technology, CMOS or memory device simulation experience is required4. TCAD experience5. Good at semiconductor devices6. Python or C language7. Good communication skills and English skills8. Good learning ability and ability to analyze problems 职能类别：半导体技术 关键字：TCAD仿真